technology
Samsung and SK Hynix Plan $518 Billion Joint Investment in Memory Sites
Samsung and SK hynix will build four new memory fabs and an HBM hub in South Korea's Southwest Region. SK hynix is also constructing a $4 billion HBM facility in Indiana while Sandisk, Kioxia and Micron expand NAND and wafer production.
Jul 12, 4:42 PM·1m read1 source
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Samsung and SK hynix are jointly investing 800 trillion won, or $518 billion, to build four new memory manufacturing sites and one high-bandwidth memory packaging hub in Korea’s Southwest Region, forbes.com reported. The investment was announced with Korea’s President Lee Jae Myung. The two companies together produce about two-thirds of the world’s DRAM memory chips.
Each is constructing two fabrication plants in the Southwest Region. SK hynix is building a $4 billion advanced packaging and R&D facility for high-bandwidth memory in West Lafayette, Indiana. Mass production at the site is scheduled for late 2028.
Sandisk and Kioxia began production of their 10th-generation 3D NAND, called BiCS10, at a facility in Kitakami, Japan. The chips contain 332 layers of TLC flash memory, reach a maximum interface speed of 4.8 Gb/s and deliver bit density greater than 29 Gb/mm², a 59 percent improvement over the prior generation.
Input power consumption falls 10 percent and output power consumption falls 34 percent compared with BiCS8.
The manufacturing and design partnership between Sandisk and Kioxia has been extended through 2034. Micron is investing $3 billion to strengthen the U.S. semiconductor supply chain. , Ltd. $500 million to advance development and manufacturing at its 300 mm raw silicon wafer facility in Sherman, Texas, under a 10-year supply agreement.
